Spin-polarization in quantum wires: Influence of Dresselhaus spin-orbit interaction and cross-section effects

We examine the effects of the full Dresselhaus spin-orbit coupling on laterally confined quantum wire states. An analysis of the relative contributions due to linear, quadratic, and cubic Dresselhaus spin-orbit terms on the energy levels, spin splitting, and spin polarization has been carried out. The effects of wire cross-sectional geometry shapes on the electronic structure are explored. In particular we compared the results of semicylindrical and cylindrical confinements and have found important differences between the spin degeneracy of the ground-state level and the spin-polarization dependence on sign inversion of the free linear momentum quantum number along the wire axis. Different from other symmetries, in both cases here considered, the stronger spin-splitting effects come from the quadratic Dresselhaus term. We report ideal conditions for realization of spin-field filter devices based on symmetry properties of the spin splitting of the ground state in semicylindrical quantum wires

Quantum oscillations of spin polarization in a GaAs/AlGaAs double quantum well

5 We employ the circular-polarization-resolved magnetophotoluminescence technique to probe the spin character of electron and hole states in a GaAs/AlGaAs strongly coupled double-quantum-well system. The photoluminescence (PL) intensities of the lines associated with symmetric and antisymmetric electron states present clear out-of-phase oscillations between integer values of the filling factor. and are caused by magnetic-field-induced changes in the population of occupied Landau levels near to the Fermi level of the system. Moreover, the degree of circular polarization of these emissions also exhibits the oscillatory behavior with increasing magnetic field. Both quantum oscillations observed in the PL intensities and in the degree of polarizations may be understood in terms of a simple single-particle approach model. The k . p method was used to calculate the photoluminescence peak energies and the degree of circular polarizations in the double-quantum-well structure as a function of the magnetic field. These calculations prove that the character of valence band states plays an important role in the determination of the degree of circular polarization and, thus, resulting in a magnetic-field-induced change of the polarization sign.FAPESPFAPESPCNPqCNPqNHMFL-UCGPNHMFLUCGPFSU-EEIGFSUEEIGState of FloridaState of FloridaDOEDOE[NSF/DMR-0654118

Anisotropic Confinement, Electronic Coupling and Strain Induced Effects Detected by Valence-Band Anisotropy in Self-Assembled Quantum Dots

A method to determine the effects of the geometry and lateral ordering on the electronic properties of an array of one-dimensional self-assembled quantum dots is discussed. A model that takes into account the valence-band anisotropic effective masses and strain effects must be used to describe the behavior of the photoluminescence emission, proposed as a clean tool for the characterization of dot anisotropy and/or inter-dot coupling. Under special growth conditions, such as substrate temperature and Arsenic background, 1D chains of In0.4Ga0.6 As quantum dots were grown by molecular beam epitaxy. Grazing-incidence X-ray diffraction measurements directly evidence the strong strain anisotropy due to the formation of quantum dot chains, probed by polarization-resolved low-temperature photoluminescence. The results are in fair good agreement with the proposed model

Semiconductor Spintronics

Spintronics refers commonly to phenomena in which the spin of electrons in a solid state environment plays the determining role. In a more narrow sense spintronics is an emerging research field of electronics: spintronics devices are based on a spin control of electronics, or on an electrical and optical control of spin or magnetism. This review presents selected themes of semiconductor spintronics, introducing important concepts in spin transport, spin injection, Silsbee-Johnson spin-charge coupling, and spindependent tunneling, as well as spin relaxation and spin dynamics. The most fundamental spin-dependent nteraction in nonmagnetic semiconductors is spin-orbit coupling. Depending on the crystal symmetries of the material, as well as on the structural properties of semiconductor based heterostructures, the spin-orbit coupling takes on different functional forms, giving a nice playground of effective spin-orbit Hamiltonians. The effective Hamiltonians for the most relevant classes of materials and heterostructures are derived here from realistic electronic band structure descriptions. Most semiconductor device systems are still theoretical concepts, waiting for experimental demonstrations. A review of selected proposed, and a few demonstrated devices is presented, with detailed description of two important classes: magnetic resonant tunnel structures and bipolar magnetic diodes and transistors. In most cases the presentation is of tutorial style, introducing the essential theoretical formalism at an accessible level, with case-study-like illustrations of actual experimental results, as well as with brief reviews of relevant recent achievements in the field.Comment: tutorial review; 342 pages, 132 figure

Particle-hole–like symmetry and valley degeneracy splitting in graphene dot and antidot

We report a combined effect of dot confinement, graphene-substrate coupling, spin-orbit interaction and applied magnetic field on particle-hole–like symmetry and valley degeneracy. General conditions to control and manipulate the bound-state solutions are described in terms of external and controllable parameters, such as repulsive and attractive voltages, the magnitude of the graphene-substrate coupling parameter, spin-orbit coupling (SOC) strength, and magnetic field. We find that the confinement potential alone does not lift the valley degeneracy. But it together with either the mass term or magnetic field splits the valley degeneracy. The SOC which couples the real spin of an electron and sublattice pseudospin interacts with magnetic field, leading to multiple splitting of Landau levels. Remarkably, changing the sign of voltage and the SOC, the particle-hole–like symmetry can be either broken or restored, which sheds light on the tunability of valley degeneracy and particle-hole symmetry by external controls

Anisotropic Confinement, Electronic Coupling and Strain Induced Effects Detected by Valence-Band Anisotropy in Self-Assembled Quantum Dots

Abstract A method to determine the effects of the geometry and lateral ordering on the electronic properties of an array of one-dimensional self-assembled quantum dots is discussed. A model that takes into account the valence-band anisotropic effective masses and strain effects must be used to describe the behavior of the photoluminescence emission, proposed as a clean tool for the characterization of dot anisotropy and/or inter-dot coupling. Under special growth conditions, such as substrate temperature and Arsenic background, 1D chains of In0.4Ga0.6 As quantum dots were grown by molecular beam epitaxy. Grazing-incidence X-ray diffraction measurements directly evidence the strong strain anisotropy due to the formation of quantum dot chains, probed by polarization-resolved low-temperature photoluminescence. The results are in fair good agreement with the proposed model.</p